Research data supporting Doping density extraction of plasma treated metal oxide thin film diodes by capacitance-voltage analysis

Capacitance-voltage (CV) and current-voltage (IV) measurement were performed on the p-n heterojunction thin film diodes (n-type Zinc-tin oxide and p-type cuprous oxide) fabricated. A total of three epresentative diodes/samples were meaured; which are O2 plasma treated, N2 plasma treated and untreaed. CV and IV data are collected on the Semiconductor parameter analyser in .csv file format (as shown in the raw data file attached). Analysis of the CV and IV data, and calculation of donor density were performed using Origin software.