基于55nm与28nm工艺NBTI效应老化可靠性模型实验数据
收藏资源简介:
该数据集包含用于构建和验证NBTI老化可靠性模型的完整实验数据、脚本及结果文件。数据覆盖55nm与28nm工艺下14种基本单元门电路,在统一应力条件(Vgs、温度、时间)下进行NBTI老化仿真,并通过自动化脚本生成模型建模结果及HSPICE蒙特卡罗参考结果。数据内容包括NBTI建模软件代码、工艺库文件、单元门网表、参数配置文件、自动化建模脚本、MATLAB批处理比对脚本、建模与仿真结果文件,以及模型误差结果的可视化图像与汇总表。另包含第三方测试报告和相关论文专利,用于支撑模型的可信度。该数据集可用于先进工艺下NBTI退化机理研究、模型验证及EDA工具集成测试。
This dataset provides complete experimental data, scripts, and result files for developing and validating NBTI aging reliability models. It covers 14 types of basic standard cell gates under 55nm and 28nm process nodes. NBTI aging simulations were conducted under uniform stress conditions including Vgs, temperature, and stress time, and automated scripts were used to generate model development results and HSPICE Monte Carlo reference results. The dataset includes NBTI modeling software code, process library files, standard cell gate netlists, parameter configuration files, automated modeling scripts, MATLAB batch comparison scripts, modeling and simulation result files, as well as visualized images and summary tables of model error results. Additionally, it contains third-party test reports, relevant papers and patents to support the credibility of the models. This dataset can be utilized for research on NBTI degradation mechanisms under advanced process nodes, model validation, and integration testing of EDA tools.




