高击穿电压与导通电流的金刚石功能器件性能表征与仿真数据集
收藏资源简介:
该数据集主要面向金刚石功能器件领域的研究,旨在为金刚石等宽禁带半导体功率器件研究提供数据支持,为器件性能优化设计提供参考。本数据集内容包含金刚石功率肖特基二极管器件、金刚石功率场效应晶体管器件的各项重要电学性能指标以及金刚石器件耐压特性仿真数据,包括肖特基二极管器件导通电流密度、肖特基二极管器件反向击穿电压、掺硼金刚石比接触电阻、场效应晶体管器件导通电流密度、场效应晶体管器件反向击穿电压及氢终端表面比接触电阻的测试数据、耐压金刚石器件结构电场分布仿真设计数据,检验报告、论文和专利。数据集总量约为56MB。
This dataset is primarily oriented towards research in the field of diamond functional devices, aiming to provide data support for studies on wide-bandgap semiconductor power devices such as diamond, and offer references for the optimal design of device performance. The dataset contains various key electrical performance metrics of diamond power Schottky diodes and diamond power field-effect transistors (FETs), as well as simulation data on the voltage-withstanding characteristics of diamond devices. Specific included content covers: test data of the on-current density of Schottky diodes, reverse breakdown voltage of Schottky diodes, specific contact resistance of boron-doped diamond, on-current density of FETs, reverse breakdown voltage of FETs, and specific contact resistance of hydrogen-terminated surfaces; simulation design data of electric field distribution for voltage-withstanding diamond device structures; as well as test reports, academic papers and patents. The total size of this dataset is approximately 56 MB.




