Multi-modal characterization of silicon carbide MOSFET trench defects

Silicon carbide (SiC) is a promising wide-bandgap (WBG) semiconductor, enabling power electronics to be smaller, faster, more efficient and more reliable than their counterparts...碳化硅（Silicon carbide, SiC）是一类极具潜力的宽禁带（wide-bandgap, WBG）半导体材料，可使电力电子器件相较于传统同类产品实现更小体积、更快响应、更高效率以及更可靠的运行表现……