Completely Annealing-Free Flexible Perovskite Quantum Dot Solar Cells Employing UV-Sintered Ga-Doped SnO2 Electron Transport Layers.xlsx

Fig. 1: Crystallographic and chemical properties of each SnO2 filma−c GIWAXS patterns for SnO2 NP, SnO2 CNR, and Ga:SnO2 CNR films, respectively. d XPS core level spectra of Ga 2p and Sn 3d for each SnO2 film. e Deconvoluted XPS O 1s spectra of each SnO2 film. f HR-TEM image and schematic representation of Ga:SnO2 CNR morphology and chemical structure. Fig. 2: Charge transport property from CsPbI3-PQD to customized SnO2.a J−V characteristics and calculated conductivity for each SnO2-based device. b Energy band diagrams for the configurations of the CsPbI3-PQD solar cell. c Mott–Schottky plots of CsPbI3-PQD solar cell with each SnO2 ETL. d Steady-state PL spectra of the CsPbI3-PQD films deposited on each SnO2 film. e TRPL spectra with excitation wavelength of 463 nm for CsPbI3-PQD films deposited on each SnO2 film. f Dark J−V curves of the electron-only devices (ITO/SnO2/CsPbI3-PQD/PCBM/Au) with VTFL kink points. Fig. 3: CsPbI3-PQD solar cell performance using each SnO2 as ETL.a Schematic illustration representing the UV sintering process for formation of SnO2 CNR thin film and fabrication method for CsPbI3-PQD solar cells. b J−V characteristics of best-performing CsPbI3-PQD solar cells using various SnO2 as ETL (inset: device configuration measured by SEM). c IPCE spectra of CsPbI3-PQD solar cells with SnO2 ETLs and integrated JSC calculated from IPCE. d Normalized PCE obtained by stability tests of each SnO2-based device under ambient condition (25℃, 20% RH) for 10 days (inset: XRD data of the CsPbI3-PQD film exfoliated from each SnO2 after 1 day and 7 days, respectively).Fig. 4: Characterizations of each SnO2 ETL-based flexible CsPbI3-PQD solar cellsa J−V characteristics of best-performing flexible CsPbI3-PQD solar cells using various SnO2 as ETL (inset: photograph of the fabricated flexible solar cell). b In-situ relative resistance change (ΔR/R0) of each SnO2-based device (ITO/SnO2/Au) during bending test with 7.5 mm of curvature of radius (RC) (inset: after recovery from bending at various values of RC). c Normalized PCE of the flexible CsPbI3-PQD solar cell after repeated bending at RC = 7.5 mm for 500 bending cycles (inset: top-view SEM image of SnO2 film on a flexible substrate before and after bending test).Table 1. Photovoltaic parameters of best-performing CsPbI3-PQD solar cells with various SnO2 ETLs (SnO2 NP, SnO2 CNR, and Ga:SnO2 CNR) under 1 sun conditions.Table 2. Photovoltaic parameters of best-performing flexible CsPbI3-PQD solar cells with various SnO2 ETLs (SnO2 NP, SnO2 CNR, and Ga:SnO2 CNR) under 1 sun conditions.图1：各SnO₂薄膜的晶体学与化学性质 a~c 分别为SnO₂纳米颗粒（SnO₂ NP）、SnO₂纳米带（SnO₂ CNR）以及掺镓SnO₂纳米带（Ga:SnO₂ CNR）薄膜的掠入射广角X射线散射（GIWAXS）图谱。d 为各SnO₂薄膜的Ga 2p与Sn 3d X射线光电子能谱（XPS）核心能级谱。e 为各SnO₂薄膜的解卷积XPS O 1s谱。f 为Ga:SnO₂ CNR的形貌与化学结构的高分辨透射电子显微镜（HR-TEM）图像及示意图。 图2：基于CsPbI₃钙钛矿量子点（CsPbI₃-PQD）到定制化SnO₂的电荷传输特性 a 为各基于SnO₂器件的电流密度-电压（J-V）特性与计算得到的电导率。b 为CsPbI₃-PQD太阳能电池的能级结构示意图。c 为搭载各SnO₂电子传输层（ETL）的CsPbI₃-PQD太阳能电池的莫特-肖特基（Mott-Schottky）曲线。d 为沉积在各SnO₂薄膜上的CsPbI₃-PQD薄膜的稳态光致发光（PL）光谱。e 为激发波长为463 nm时，沉积在各SnO₂薄膜上的CsPbI₃-PQD薄膜的时间分辨光致发光（TRPL）光谱。f 为电子-only器件（氧化铟锡（ITO）/SnO₂/CsPbI₃-PQD/PCBM/Au）的暗态J-V曲线，包含陷阱填充极限电压（VTFL）拐点。 图3：以各SnO₂作为电子传输层的CsPbI₃-PQD太阳能电池性能 a 为制备SnO₂纳米带薄膜的紫外烧结工艺以及CsPbI₃-PQD太阳能电池制备方法的示意图。b 为使用各类SnO₂作为电子传输层的最优性能CsPbI₃-PQD太阳能电池的J-V特性（插图：通过扫描电子显微镜（SEM）测得的器件构型）。c 为搭载各类SnO₂电子传输层的CsPbI₃-PQD太阳能电池的入射光子-电子转换效率（IPCE）光谱，以及由IPCE积分得到的短路电流密度（J_SC）。d 为各基于SnO₂的器件在25℃、相对湿度20%的大气环境中放置10天后的归一化光电转换效率（PCE）（插图：分别在放置1天与7天后从各SnO₂薄膜上剥离的CsPbI₃-PQD薄膜的X射线衍射（XRD）数据）。 图4：搭载各SnO₂电子传输层的柔性CsPbI₃-PQD太阳能电池的表征 a 为使用各类SnO₂作为电子传输层的最优性能柔性CsPbI₃-PQD太阳能电池的J-V特性（插图：制备完成的柔性太阳能电池照片）。b 为在曲率半径为7.5 mm的弯折测试中，各基于SnO₂的器件（ITO/SnO₂/Au）的原位相对电阻变化量（ΔR/R₀）（插图：在不同曲率半径的弯折恢复后的测试结果）。c 为在曲率半径7.5 mm下经过500次重复弯折后，柔性CsPbI₃-PQD太阳能电池的归一化光电转换效率（PCE）（插图：弯折测试前后柔性基底上SnO₂薄膜的俯视扫描电子显微镜（SEM）图像）。 表1：在标准AM1.5G 1太阳光照条件下，搭载各类SnO₂电子传输层（SnO₂ NP、SnO₂ CNR与Ga:SnO₂ CNR）的最优性能CsPbI₃-PQD太阳能电池的光伏参数。 表2：在标准AM1.5G 1太阳光照条件下，搭载各类SnO₂电子传输层（SnO₂ NP、SnO₂ CNR与Ga:SnO₂ CNR）的最优性能柔性CsPbI₃-PQD太阳能电池的光伏参数。