XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111)

The DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate and vanadium thin films were obtained by annealing as-prepared films at 600°C under synthetic air. X-ray diffraction patterns (XRD) were collected on a Philips X’PERT PLUS diffractometer with Cu Ka radiation (1.5406 Å) and ranging from 10 to 80 degrees.本数据集包含沉积于各向同性刻蚀(111)晶面硅衬底的五氧化二钒(V₂O₅)薄膜的X射线衍射（X-ray Diffraction, XRD）图谱。所用硅片采用硝酸、氢氟酸与乙酸按40:1:15的体积比混合的刻蚀液进行刻蚀，衬底的浸泡刻蚀时长为30至90秒。该薄膜通过溶胶-凝胶法（sol-gel method）制备，溶胶合成的相关细节已发表于《Journal of Nanomaterials》（《纳米材料期刊》）。将溶胶涂覆于硅衬底后，将所得前驱膜置于合成空气中以600℃退火，即可得到五氧化二钒薄膜。衍射数据采用Philips X’PERT PLUS型X射线衍射仪采集，辐射源为Cu Kα射线（波长1.5406 Å），扫描范围为10°至80°。