Role of Semiconductor and Oxide Thickness on SS and Vt

Data set explores the role of semiconductor thickness in the determination of the subthreshold swing and threshold voltage of WSe2 field effect transistors. The observed increase in subthreshold swing with decreasing thickness is explained by including the effect of the semiconductor capacitance on the subthreshold swing. The semicondcutor capacitance is calculated by using the geometric capacitance of the semiconductor flake. We verify this choice by using this model to extract the bandgap value of bulk WSe2 from ambipolar transfer curves.