Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β-Ga2O3
收藏B2FIND2026-04-11 收录
官方服务：
资源简介：
We investigate formation energies of C, Si, and Ge defects in β-Ga2O3 through hybrid functional calculations. We find that the interstitial defects of these elements generally...
