To investigate the single event effects and hard damage that advanced process commercial high-performance Dynamic Random Access Memory (DRAM) may experience in space environments, single-particle flip
TOTAL ionizing dose (TID) induced threshold voltage (Vt) shifts limit reliability in integrated circuits (ICs) used in spacecraft. Deposited electron hole pairs are subject to recombination. However,
Modern semiconductor-based components used, e.g., in automotive vehicles, contain registers and random access memory (SRAM). Due to naturally occurring ionising radiation, a.o....
This is a dataset of YMTC 128 Layer 3D NAND Flash Single Event Effect Data, including the fluent variation during radiation;bit error map;data pattern dependence;layer error dependence
