XRD pattern of Mo2Ga2C, Mo2CTx/Mo2GaC and Ni-Mo2CTx/Mo2Ga2C materials

In the dataset are included raw data for the preparation of XRD pattern of Mo2Ga2C, Mo2CTx/Mo2GaC and Ni-Mo2CTx/Mo2Ga2C materials. The MAX materials were synthesised according to the procedure: 1) Gring of Mo2C powder with liquid gallium for 60 min in agate mortar at molar ration equal to Mo2C:Ga=1:10. 2)Transfer to the quartz ampule. 3) Evacuating and purging the ampule in order to remove oxygen. Closing the ampule under vacuum. 4) High-temperature annealing at 850 deg. C for 48 hours. The heating rate was maintained at 10 deg. C per minute. 5) Removing potentially formed oxides through leaching with 35% hydrochloric acid. 6) Drying under vacuum at 50 deg. C to dry mass. The preparation procedure for Mo2CTx/Mo2GaC: 1) Etching of Mo2Ga2C with XF/HCl mixture (where X= Na, Li, K) under hydrothermal conditions at 90 deg. C for 24 or 48 hours. 2) Washing with water. 3) Dring at 50 deg. C under vacuum. The preparation procedure for Ni-Mo2CTx/Mo2GaC: 1) Impregnation of previously prepared Mo2CTx/Mo2GaC with aqueous nickel nitrate solution. 2) Dring at 50 deg. C under vacuum.本数据集包含用于制备Mo₂Ga₂C、Mo₂CTₓ/Mo₂GaC以及Ni-Mo₂CTₓ/Mo₂Ga₂C材料的X射线衍射（XRD）图谱原始数据。 MAX相材料的合成步骤如下： 1) 将Mo₂C粉末与液态镓置于玛瑙研钵中研磨60分钟，物料摩尔比为Mo₂C:Ga=1:10。 2) 将混合物转移至石英安瓿瓶中。 3) 对安瓿瓶进行抽真空与吹扫以除去体系内的氧气，随后在真空条件下密封安瓿瓶。 4) 在850℃下进行高温退火处理48小时，升温速率控制为10℃/分钟。 5) 采用35%盐酸进行浸洗，以去除反应过程中可能生成的氧化物。 6) 在50℃真空条件下干燥至恒重。 Mo₂CTₓ/Mo₂GaC的制备流程如下： 1) 在水热条件下，使用XF/HCl混合体系（其中X=Na、Li、K）刻蚀Mo₂Ga₂C，反应温度为90℃，反应时长为24或48小时。 2) 以去离子水洗涤产物。 3) 在50℃真空条件下干燥。 Ni-Mo₂CTₓ/Mo₂GaC的制备流程如下： 1) 将预先制备得到的Mo₂CTₓ/Mo₂GaC浸渍于硝酸镍水溶液中。 2) 在50℃真空条件下干燥。