Experimental evaluation of the reliability of Wide Band Gap semiconductor devices during Space Weather Events
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资源简介：
Nowadays, electronic systems in avionics and automotive use new Wide Band Gap semiconductor Power Devices, mainly based on Silicon Carbide material. The hazard of device damages induced by neutrons due to the interaction of Terrestrial Cosmic Rays, which depend on the Space Weather conditions near earth, is a critical issue for the reliability of these devices. Usually, the neutrons effects on the Power Devices are investigated at room temperature. We propose to perform neutron tests of SiC and Si Power MOSFET’s at different temperatures, in the range -50 °C 200 °C.
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ISIS Facility创建时间：
2021-04-27
