JART VCM v1

Short description: The JART VCM v1 model was developed to simulate the switching characteristics of devices based on the valence change mechanism (also called OxRAM). In this model, the ionic defect concentration (oxygen vacancies) in the disc region close to the active electrode (AE) (see Figure 1) defines the resistance state. The concentration changes due to the non-isothermal drift of the ionic defects. In this model, Joule heating is considered, which significantly accelerates the switching process at high current levels. The model was developed to study the two-step SET process of VCM cells [1] and the influence of an intrinsic series resistance on the switching characteristics [2]. The Verilog-A code of this model can be downloaded. In addition, we provide a stand-alone MATLAB App . To use the MATLAB app the downloaded file needs to be executed. During the first installation, the MATLAB runtime environment will be downloaded from the internet. JART VCM v1 STO parameter set The JART VCM v1 model can be used for different filamentary bipolar resistive switching material systems based on the Valence Change Mechanism. A different parameter set for this model is displayed in Table 1. It has recently been fitted again to the STO cells presented in [1]. The results from Figure 2 can be obtained by exchanging the fitting parameters with the ones in Table 1.

简短说明：JART VCM v1模型旨在模拟基于价变机制（Valence Change Mechanism，亦称OxRAM）的器件的开关特性。在此模型中，靠近有源电极（Active Electrode，AE）的圆盘区域内的离子缺陷浓度（氧空位）决定了器件的电阻状态（参见图1）。该浓度因离子缺陷的非等温漂移而发生变化。此模型考虑了焦耳加热效应，其在大电流水平下可显著加速开关过程。本模型开发用于研究VCM单元的两步SET工艺[1]以及本征串联电阻对开关特性的影响[2]。该模型的Verilog-A代码可下载获取。此外，我们还提供了独立MATLAB应用程序。使用该MATLAB应用程序时，需运行下载的文件；首次安装期间，MATLAB运行时环境将从互联网下载。
JART VCM v1 STO参数集
JART VCM v1模型可应用于多种基于价变机制的丝状双极阻变开关材料体系。该模型的不同参数集如表1所示。近期该参数集已针对文献[1]中提出的STO单元完成重新拟合。将拟合参数替换为表1中的参数后，即可得到图2所示的结果。