gaatfet device verilog a model and circuit simulations
收藏官方服务：
资源简介：
Verilog a model for HD_TMGTFET device and sample simulations
应用场景：
创建时间：
2024-01-23
相关数据集
Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise
The files correspond to experimental results in paper: "Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise" published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, Issue:
orda.shef.ac.uk2023-05-30 更新150
SPAD state-of-the-art PDP and DCR comparison
The data set shows the state-of-the-art comparison of SPAD PDP and DCR, presented in "A Substrate Isolated CMOS SPAD Enabling Wide Spectral Response and Low Electrical Crosstalk", C. Veerappan and E.
DataCite Commons2020-09-03 更新130
A Closed-Form Model for N-Polar Gallium Nitride Heterostructures
The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equ
DataCite Commons2023-04-04 更新90
Single-Event Effects Induced by Monoenergetic Fast Neutrons in Silicon Power UMOSFETs
The trench gate or U-groove MOSFET (UMOSFET) has become widely adopted as a semiconductor device globally, gradually replacing the traditional double-diffused MOSFET (DMOSFET) in many applications. Ev
DataCite Commons2024-11-12 更新130
Dataset for Modelling Gate-Oxide-Short Defects in FinFET 3D Structure and Development of Associated Fault Models for Complex Logic Gates
FinFET manufacturing process for 16 nm technology was simulated using the Sentaurus TCAD ‘sprocess’ tool provided by Synopsys. The process was simulated for both the defect-free triangular FinFET as w
Mendeley Data2024-03-27 更新120
