TSMC 22nm工艺Voltage sensor设计与测试数据
收藏资源简介：
本数据是基于TSMC 22nm先进工艺节点的“高分辨率、高采样率”电压传感器全流程实测样本库。数据集内容系统涵盖了从前端设计仿真到硅后实测的完整技术链路：包括Verilog逻辑设计文件、SPICE网表、多PVT条件与不同采样率下的fsdb动态响应波形，以及基于22nm工艺流片后的物理实测数据（涵盖最高/最低监测电压、有效分辨率、采样速度等关键指标）。数据采集遵循严格的软件认证、硬件校准与流程规范，依托高精度源表与示波器等标准化设施，并引入第三方全流程现场监督与认证机制，确保了数据的质量可靠性。作为一套可追溯的片上监测技术参考基准，本数据集能够有效支撑IR Drop感知、纳秒级瞬态电压跌落捕捉及宽电压时序签核研究，为高性能计算芯片的弹性架构探索提供了坚实的物理实证支撑。该数据集已作为重点研发计划项目成果的重要组成部分，进行规范化汇交与管理。
This dataset is a full-process measured sample library of "high-resolution and high-sampling rate" voltage sensors based on TSMC's 22nm advanced process node. The dataset systematically covers the complete technical workflow from front-end design and simulation to post-silicon measurement, including Verilog logic design files, SPICE netlists, fsdb dynamic response waveforms under multiple PVT conditions and different sampling rates, as well as physical measured data obtained after tape-out using the 22nm process, which covers key metrics such as maximum/minimum monitored voltage, effective resolution, sampling speed and other critical indicators. The data collection follows strict software certification, hardware calibration and process specifications, relies on standardized facilities such as high-precision source meters and oscilloscopes, and introduces third-party on-site supervision and certification mechanisms for the entire process to ensure the quality and reliability of the data. As a traceable reference benchmark for on-chip monitoring technology, this dataset can effectively support research on IR Drop sensing, nanosecond-level transient voltage drop capture and wide-voltage timing signoff, providing solid physical empirical support for the exploration of resilient architectures for high-performance computing chips. This dataset has been standardizedly submitted and managed as an important component of the achievements of a key research and development plan project.
